P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
نویسندگان
چکیده
منابع مشابه
Optical Investigations of stacking faults in 4H-SiC epitaxial layers: comparison of 3C and 8H polytypes
We present an analysis of the electronic structure of in-grown 3C and 8H stacking faults (SFs) in a 4H-SiC matrix. First the concept of low temperature photoluminescence optical signature of SFs is discussed. Then, the results of type-II quantum well (QW) model calculations are displayed, taking into account the effect of valence band offset, internal polarization field and non homogeneity of t...
متن کاملEpitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to ...
متن کامل3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...
متن کاملSuppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...
متن کاملEpitaxial silicon oxynitride layer on a 6H-SiC(0001) surface.
Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2009
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/msf.615-617.165